High-field electrical transport in single-wall carbon nanotubes
نویسندگان
چکیده
Using low-resistance electrical contacts, we have measured the intrinsic high-field transport properties of metallic single-wall carbon nanotubes. Individual nanotubes appear to be able to carry currents with a density exceeding 10(9) A/cm(2). As the bias voltage is increased, the conductance drops dramatically due to scattering of electrons. We show that the current-voltage characteristics can be explained by considering optical or zone-boundary phonon emission as the dominant scattering mechanism at high field.
منابع مشابه
Hybrid nanofluid based on CuO nanoparticles and single-walled Carbon nanotubes: Optimization, thermal, and electrical properties
The purpose of this study is to use the thermal and electrical conductivities of copper oxide nanoparticles and carbon nanotubes for the preparation of high-performance nanofluids for achieving better heat transfer properties. These nanofluids consist of a water/Ethylene Glycol solution containing single-wall carbon nanotubes (SWCNTs) and copper oxide nanoparticles (CuONPs). The effects of such...
متن کاملInvestigation of Molecular Selenium Adsorption to the Outer Surface of Single Wall Carbon Nanotubes
In this study the adsorption of selenium molecule (Se2) on the outer surface of zigzag (5,0), (8,0) and (10,0) carbon nanotubes has been investigated. We examined number adsorbed orientations as well as different adsorption sites on nanotubes. The adsorption energies, equilibrium distances, energy differences between the highest occupied molecular orbital (HOMO) and lowest uno...
متن کاملElectrical Transport in Single-Wall Carbon Nanotubes
We review recent progress in the measurement and understanding of the electrical properties of individual metal and semiconducting single-wall carbon nanotubes. The fundamental scattering mechanisms governing the electrical transport in nanotubes are discussed, along with the properties of p–n and Schottkybarrier junctions in semiconductor tubes. The use of advanced nanotube devices for electro...
متن کاملThe performance of in situ grown Schottky-barrier single wall carbon nanotube field-effect transistors.
Electrical transport measurements were used to study device behavior that results from the interplay of defects and inadvertent contact variance that develops in as-grown semiconducting single wall carbon nanotube devices with nominally identical Au contacts. The transport measurements reveal that as-grown nanotubes contain defects that limit the performance of field-effect transistors with ohm...
متن کاملFirst principle study of structural and electronic transport properties for electrically doped zigzag single wall GaAs nanotubes
Emerging trend in semiconductor nanotechnology motivates to design various crystalline nanotubes. The structural and electronic transport properties of single walled zigzag Gallium Arsenide nanotubes have been investigated using Density Functional Theory (DFT) and Non-Equilibrium Green’s Function (NEGF) based First Principle formalisms. Structural stability and enhanced electronic transmission ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Physical review letters
دوره 84 13 شماره
صفحات -
تاریخ انتشار 2000